@article{X. Zhou_Q. Y. Feng_2020, title={Comparison of Different Ways of Extra Phosphorus Implantation Which Decrease the Threshold Voltage and On-resistance of UMOS}, volume={35}, url={https://journals.riverpublishers.com/index.php/ACES/article/view/7601}, abstractNote={<p>A method to decrease the threshold voltage and on-resistance is discussed in this paper, which is adding extra phosphorus implantation into silicon. There are two ways to implant extra phosphorus without adding a mask. The first way is to implant extra phosphorus after the field oxide etching, and the second way is to implant extra phosphorus with the source region mask before the N+ implantation. Compare the results of the two ways to find their characteristics and choose the appropriate one.</p>}, number={11}, journal={The Applied Computational Electromagnetics Society Journal (ACES)}, author={X. Zhou and Q. Y. Feng}, year={2020}, month={Nov.}, pages={1398–1399} }