MIRZAVAND, L. .; ABDIPOUR, A. .; MIRZAVAND, R. . Time Domain Analysis of GaAS MESFET Transistors Excited by an Incident Electromagnetic Field. Applied Computational Electromagnetics Society Journal (ACES), [S. l.], v. 29, n. 10, p. 821–827, 2021. Disponível em: https://journals.riverpublishers.com/index.php/ACES/article/view/10885. Acesso em: 22 jun. 2026.