FENG LI; QING H. LIU; DAVID P. KLEMER. Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method. The Applied Computational Electromagnetics Society Journal (ACES), [S. l.], v. 31, n. 10, p. 1144–1150, 2021. Disponível em: https://journals.riverpublishers.com/index.php/ACES/article/view/9859. Acesso em: 17 may. 2024.