1.
Feng Li, Qing H. Liu, David P. Klemer. Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method. ACES Journal [Internet]. 2021 Aug. 8 [cited 2024 May 21];31(10):1144-50. Available from: https://journals.riverpublishers.com/index.php/ACES/article/view/9859