Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

Authors

  • Yuming Xue Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
  • Xinyu Wang Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
  • Liming Zhang Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
  • Shipeng Zhang Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
  • Lang Wang Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
  • Hang Sun Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

DOI:

https://doi.org/10.13052/dgaej2156-3306.37216

Keywords:

CBD (chemical bath deposition), Zinc sulfate concentration, CIGS solar cell.

Abstract

Cd1−xZnxS thin films were deposited on glass substrates by chemical bath
deposition (CBD). The effect of ZnSO4 solution concentration on the prop-
erties of the thin films was analyzed. The concentration of ZnSO4 solution
affects the deposition rate of Cd1−xZnxS thin films. When the deposition rate
is low, Cd1−xZnxS cubic crystal phase is formed. The surface morphology of
hexagonal Cd1−xZnxS thin films is denser than that of cubic phase, the lattice
mismatch rate of cubic phase Cd1−xZnxS thin films and CIGS is lower, only
0.56%, the interfacial state density is lower. SCAPS software was used to
simulate the performance of the buffer layer and the conversion efficiency
of the cubic phase Cd1−xZnxS buffer layer in CIGS Solar Cell was up to
23.50%. Based on the EDS results, the functional relationship between the
contents of Zn2+ and Cd2+ in the films and the bandgap content was deduced.

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Author Biographies

Yuming Xue, Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Yuming Xue is an associate Professor, School of Integrated Circuit Sci-
ence and Engineering, Tianjin University of Technology, Tianjin, China.
He received PhD degree in Microelectronics and Solid State Electronics.
He has been engaged in research on thin film semiconductor materials and
devices for 21 years. Deposit thin films by the techniques of co-evaporation,
sputtering & selenizing; Deposition, CBD (chemical bath deposition), rf
magnetron sputtering and DC magnetron sputtering. Study structural, opti-
cal, electrical properties of thin films by many kinds of measurements:
XRD, Raman, XRF, EDX, SIMS, SEM, XPS, Hall, HR-optical microscope,
Step Profilometer, Infrared Absorption Spectrometry, Spectrophotometry, I-V
curve of the solar cells,QE and FTIR. Deposit and research on all thin films
made of CIGS thin film solar cell (from Mo back contacts, CIGS absorber
layers with OVC surface layer, CdS and Cd(Mg)S) buffer layers, ZnO and
ZnSe window layers and ZnO:Al transparent conductive layers to Ni/Al
electrodes).

Xinyu Wang, Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Xinyu Wang (1995–), female, born in Xianyang, Shaanxi province, China.
In the fall of 2014, she entered Tianjin University of Technology, majoring in integrated circuits and Integrated Systems, and received her bachelor’s degree
in June 2018.
Since autumn 2019, She has been studying for master’s degree in Inte-
grated circuit Engineering in Tianjin Key Laboratory of Film Electronic &
Communication Devices, School of Integrated Circuit Science and Engineer-
ing, Tianjin University of Technology, Tianjin University of Technology.
Research direction: CIGS thin film solar cell buffer.

Liming Zhang, Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Liming Zhang, male, from Henan province, China. In 2018, he was admitted
to school of Integrated Circuit Science and Engineering, Tianjin University
of Technology. Tianjin Key Laboratory of Thin Film Electronics and Com-
munication Devices, School of Integrated Circuit Science and Engineering,
Tianjin University of Technology, Master’s degree in 2020.CIGS buffer layer
CdZnS material is studied. CdZnS buffer layer was prepared by water bath
method to replace CdS to reduce environmental pollution. XRD, SEM and
other methods were used to characterize the properties of the film, and the
electrochemical properties were studied.

Shipeng Zhang, Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Shipeng Zhang (1997–), male, born in Huai’an, Jiangsu. Master of inte-
grated circuit engineering, School of School of Integrated Circuit Science and
Engineering, Tianjin University of Technology. In the fall of 2015, he entered
Nantong University, majoring in Microelectronics Science and Engineering,
and received his bachelor’s degree in the summer of 2019. In the fall of
2019, He entered the School of Integrated Circuit Science and Engineering
of Tianjin University of Technology to pursue his master degree in integrated
circuit engineering. The buffer material of solar cell was studied by chemical
bath deposition.

Lang Wang, Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Lang Wang (1996–), male, born in Datong, Shanxi provence, China. In
the fall of 2019, he entered the School of Integrated Circuit Science and
Engineering of Tianjin University of Technology to study for a master’s
degree in Integrated circuit Engineering. He studied optoelectronic Infor-
mation Science and Engineering in Tianjin University of Technology as an
undergraduate. The research direction is to prepare (S, O, Zn) materials by chemical bath deposition to replace CdS as the buffer layer of solar thin film
cells, and improve the conversion efficiency of solar cells.

Hang Sun, Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Hang Sun (1997–), male, born in Heilongjiang provence, China. In 2019,
He studied for a Master’s degree in Integrated Circuit Engineering at School
of Integrated Circuit Science and Engineering. In the summer of 2018, he
received his bachelor’s degree in Integrated Circuit Design and Integrated
System from Tianjin University of Technology. Now the main research is
solar film cells.(S, O, Zn) material is used to replace the buffer layer CdS
of the CIGS thin film solar cell buffer. In order to improve the conversion
efficiency of the solar cell.

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Published

2021-11-09

How to Cite

Xue, Y. ., Wang, X. ., Zhang, L. ., Zhang, S. ., Wang, L. ., & Sun, H. . (2021). Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell. Distributed Generation &Amp; Alternative Energy Journal, 37(2), 401–418. https://doi.org/10.13052/dgaej2156-3306.37216

Issue

2022: Vol 37 Iss 2

Section

Articles