Design of a 0.7~1.5 GHz Wideband Power Amplifier in 0.18-?m CMOS Process

Authors

  • Xiangning Fan Institute of RF&OE-ICs, School of Information Science and Engineering Southeast University, Nanjing, 210096, China
  • Zhou Yu Institute of RF&OE-ICs, School of Information Science and Engineering Southeast University, Nanjing, 210096, China
  • Jiakai Lu Institute of RF&OE-ICs, School of Information Science and Engineering Southeast University, Nanjing, 210096, China
  • Zaijun Hua Institute of RF&OE-ICs, School of Information Science and Engineering Southeast University, Nanjing, 210096, China

Keywords:

CMOS power amplifiers, lossy matching network, wideband amplifier, wideband matching

Abstract

A power amplifier (PA) for multi-mode multi-standard transceiver which is implemented in a TSMC 0.18-?m CMOS process is presented. The proposed PA improves bandwidth using matching compensation, lossy matching network and negative feedback technique. Measurement results show that the working frequency range of the wideband PA is 0.7~1.5GHz, with the maximum output power of 18.2~22.3dBm. The output P1dB during test is 16.6~21.4 dBm, and the corresponding power added efficiency (PAE) is 7.7%~23.4%. The power gain within the working frequency is larger than 16dB and the S11 is less than -13dB. According to the test results, the proposed PA can cover the frequency of more than one octave. The linearity and power gain of the PA is satisfactory within the working frequency.

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References

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Published

2021-08-18

How to Cite

[1]
X. . Fan, Z. . Yu, J. . Lu, and Z. . Hua, “Design of a 0.7~1.5 GHz Wideband Power Amplifier in 0.18-?m CMOS Process”, ACES Journal, vol. 31, no. 08, pp. 1003–1008, Aug. 2021.

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General Submission