Distributed Signal and Noise Modeling of Millimeter Wave Transistor Based on CMOS Technology

Authors

  • Z. Seifi Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics, Micro/mm-wave & Wireless Comm. Research Lab., Amirkabir University of Technology, Tehran, 15914, Iran
  • A. Abdipour Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics, Micro/mm-wave & Wireless Comm. Research Lab., Amirkabir University of Technology, Tehran, 15914, Iran
  • R. Mirzavand Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics, Micro/mm-wave & Wireless Comm. Research Lab., Amirkabir University of Technology, Tehran, 15914, Iran

Keywords:

Cadence, CMOS transistor, coupled active transmission line, distributed transmission line model, lumped MOSFET model, millimeter wave

Abstract

This paper presents a complete distributed transmission line signal and noise modeling of millimeter wave CMOS transistor. In this model, the MOSFET transistor is considered as a three-coupled active transmission line structure, exciting by the noise equivalent sources distributed on its conductors. According to the transmission line theory, closed form expressions of the signal and noise parameters for a high frequency CMOS transistor are derived as the function of device width. By using the proposed model, the scattering and noise parameters of a 130 nm MOSFET are computed over a frequency range up to 100 GHz. The results obtained by this approach is compared with the lumped elements model and verified by the simulation results of Cadence SpectreRF simulator.

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References

A. M. Niknejad and H. Hashemi, mm-Wave Silicon Technology 60 GHz and Beyond, Springer Science+Business Media, LLC, 2008.

B. Razavi, R.-H. Yan, and K. F. Lee, “Impact of distributed gate resistance on the performance of MOS devices,” IEEE Trans. Circuits Syst. I, vol. 41, pp. 750-754, Nov. 1994.

E. Abou-Allam and T. Manku, “An improved transmission-line model for MOS transistors, IEEE Transactions on Circuits and Systems - II: Analog and Digital Signal Processing, vol. 46, no. 11, Nov. 1999.

Y. Lin, M. Obrecht, and T. Manku, “RF noise characterization of MOS devices for LNA design using a physical-based quasi-3-D approach,” IEEE Transactions on Circuits and Systems - II: Analog and Digital Signal Processing, vol. 48, no. 10, Oct. 2001.

The BSIM 4.4 Manual, http://www-device.eecs. berkeley.edu/bsim4.

A. Abdipour and A. Pacauds, “Complete sliced model of microwave FETs & comparison with lumped model & experimental results,” IEEE Trans. on MTT, vol. MTT-44, pp. 4-9, Jan. 1996.

C. R. Paul, Analysis of Multiconductor Transmission Lines, 2nd edition, John Wiley & Sons, Inc., Hoboken, New Jersey, 2008.

F. E. Hohn, Elementary Matrix Algebra, 2nd edition, Macmillan, New York, 1964.

F. M. Tesche, T. K. Liu, S. K. Chang, and D. V. Giri, “Field excitation of multiconductor transmission lines,” Technical Report AFWL-TR-78-185, Air Force Weapons Lab, Albuquerque, NM, 1979.

B. Razavi, RF Microelectronics. Upper Saddle River, NJ: Prentice-Hall, 1998.

“Useful matrix chain parameter identities for the analysis of multiconductor transmission lines,” IEEE Transactions on Microwave Theory and Techniques, 23(9), 756-760, 1975.

H. A. Haus and R. B. Adler, Circuit Theory of Linear Noisy Networks, M.I.T. Press, 1959.

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Published

2021-08-22

How to Cite

[1]
Z. . Seifi, A. . Abdipour, and R. . Mirzavand, “Distributed Signal and Noise Modeling of Millimeter Wave Transistor Based on CMOS Technology”, ACES Journal, vol. 30, no. 08, pp. 915–921, Aug. 2021.

Issue

2015: Vol 30 Iss 8

Section

General Submission