A Three-Conductor Transmission Line Model for MOS Transistors

Authors

  • F. Daneshmandian Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics Micro/mm-wave & Wireless Comm. Research Lab, Amirkabir University of Technology, Tehran, 15914, Iran
  • A. Abdipour Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics Micro/mm-wave & Wireless Comm. Research Lab, Amirkabir University of Technology, Tehran, 15914, Iran
  • R. Mirzavand Electrical Engineering Department, Institute of Communications Technology and Applied Electromagnetics Micro/mm-wave & Wireless Comm. Research Lab, Amirkabir University of Technology, Tehran, 15914, Iran

Keywords:

CMOS technology, distributed analysis, FDTD method, MOSFET model, transmission line model

Abstract

An accurate high frequency small signal model for MOS transistors is presented. In the proposed model, by considering the layout of the MOS transistor, it is considered as a three-conductor transmission line. Then, a set of current-voltage equations are derived for the structure using the transmission line theory. These coupled equations are solved by the Finite-Difference Time-Domain (FDTD) technique in a marching-in-time process. To verify the model, the scattering parameters of a 0.13 m transistor are extracted from the time domain results over the 1–100 GHz frequency band and compared with the results obtained from the available models and commercial simulator. The suggested model can be useful in design of various types of high frequency integrated circuits.

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Published

2021-08-22

How to Cite

[1]
F. . Daneshmandian, A. . Abdipour, and R. . Mirzavand, “A Three-Conductor Transmission Line Model for MOS Transistors”, ACES Journal, vol. 30, no. 06, pp. 670–676, Aug. 2021.

Issue

2015: Vol 30 Iss 6

Section

General Submission