FDTD Implementations of Integrated Dependent Sources in Full-Wave Electromagnetic Simulations

Authors

  • Khaled ElMahgoub Trimble Navigation, Woburn, MA 01801, USA , Auto-ID Labs Massachusetts Institute of Technology, Cambridge, MA 02139, USA
  • Atef Z. Elsherbeni Electrical Engineering and Computer Science Department Colorado School of Mines, Golden, CO 80401, USA

Keywords:

Bipolar Junction Transistor (BJT), Current Controlled Current Source (CCCS), Current Controlled Voltage Source (CCVS), dependent sources, Finite-Difference TimeDomain (FDTD), Voltage Controlled Current Source (VCCS), Voltage Controlled Voltage Source (VCVS)

Abstract

The implementation of dependent sources such as: Current Controlled Current Source in full-wave electromagnetic simulation using the Finite-Difference Time-Domain method is introduced. This simple new approach is verified with several numerical examples. In one example, the CCCS is used to implement a circuit with Bipolar Junction Transistor. Good agreement is obtained when the results of the developed FDTD code are compared with those based on analytical solution.

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References

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Published

2021-08-30

How to Cite

[1]
K. . ElMahgoub and A. Z. . Elsherbeni, “FDTD Implementations of Integrated Dependent Sources in Full-Wave Electromagnetic Simulations”, ACES Journal, vol. 29, no. 12, pp. 1093–1101, Aug. 2021.

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