Time Domain Analysis of GaAS MESFET Transistors Excited by an Incident Electromagnetic Field
Keywords:
Coupled active transmission lines, Electromagnetic Interference (EMI), Field Effect Transistor (FET), Finite-Difference Time-Domain (FDTD), incident wave, transistor distributed modelingAbstract
A numerical method for the fully distributed modeling of Field Effect Transistor (FET) excited by an incident electromagnetic field using a Finite-Difference Time-Domain (FDTD) method is described. The transistor is modeled using the fully distributed model which consists of a configuration of the conventional equivalent circuit of the transistor and three coupled lines as each distributed element. The distributed source terms represent the coupling with an electromagnetic field in the equation which can be used in the Electromagnetic Interference (EMI) analysis. As a numerical example, the method is applied to a GaAs MESFET and the time domain results are presented.
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References
C. R. Paul, “Analysis of multiconductor transmission lines,” John Wiley Interscience, NY, 1994.
W. Luo, W. Y. Yin, M. D. Zhu, and J. Y. Zhao, “Hybrid tdie-TDPO method for studying on transient responses of some wire and surface structures illuminated by an electromagnetic pulse,” Progress In Electromagnetics Research, vol. 116, 203-219, 2011.
T. Eudes, B. Ravelo, and A. Louis, “Transient response characterization of the high-speed interconnection rlcg-model for the signal integrity analysis,” Progress In Electromagnetics Research, vol. 112, 183-197, 2011.
R. Mirzavand, A. Abdipour, G. Moradi, and M. Movahhedi, “Full-wave semicoductor devices simulation using ADI-FDTD method,” Progress In Electromagnetics Research M, vol. 11, 191-202, 2010.
R. Mirzavand, A. Abdipour, G. Moradi, and M. Movahhedi, “Full-wave semicoductor devices simulation using ADI-FDTD method,” IET Microwaves, Antennas & Propagation, vol. 5, no. 8, 685-691, 2010.
A. Taeb, A. Abdipour, and A. Mohammadi, “Modeling and analysis of a nonlinear fully distributed FET using FDTD technique,” AEUInternational Journal of Electronics and Communications, vol. 61, 444-452, 2007.
K. Afrooz, A. Abdipour, A. Tavakoli, and M. Movahhedi, “FDTD analysis of small signal model for GaAs MESFETs based on three line structure,” Asia-Pacific Microwave Conf. (APMC 2007), Bangkok, Thailand, December 2007.
A. Orlandi and C. R. Paul, “FDTD analysis of lossy, multiconductor transmission lines terminated in arbitrary loads,” IEEE Trans. Electromag. Compat., vol. 38, 388-399, 1996.
J. Bernal Mendez, F. Mesa, and D. R. Jackson, “Low-frequency excitation of leaky modes in a microstrip line with a top cover,” Progress In Electromagnetics Research, vol. 114, 235-254, 2011.
Z. Wang, “Reducing mutual coupling of closely space microstrip antennas for MIMO application at 5.8 GHz,” Journal of Electromagnetic Waves and Applications, vol. 25, no. 2-3, 399-409, 2011.
S. K. Koo, H. S. Lee, and Y. B. Park, “Crosstalk reduction effect of asymmetric stub loaded lines,” Journal of Electromagnetic Waves and Applications, vol. 25, no. 8-9, 1156-1167, 2011.
M. Izadi, M. Z. A. Ab-Kadir, and C. Gomes, “Evaluation of electromagnetic fields associated with inclined lightning channel using second order FDTD-hybrid methods,” Progress In Electromagnetics Research, vol. 117, 209-236, 2011.
C. Gomes and M. Z. A. Ab-Kadir, “Protection of naval systems against electromagnetic effects due to lightning,” Progress In Electromagnetics Research, vol. 113, 333-349, 2011.
S. Yamacli and M. Avci, “Accurate voltagedependent transmission line model for carbon nanotube interconnects and the delay calculation,” Journal of Electromagnetic Waves and Applications, vol. 25, no. 4, 553-563, 2011.
