An X-Band GaN HEMT Oscillator with Four-Path Inductors

Authors

  • Wen-Cheng Lai 1 National Yunlin University of Science and Technology, Taiwan, R. O. C. ,2 Dept. of Electronic Eng., National Taiwan University of Science and Technology, Taipei, Taiwan, R. O. C.
  • Sheng-Lyang Jang Dept. of Electronic Eng., National Taiwan University of Science and Technology, Taipei, Taiwan, R. O. C.

Keywords:

0.25 μm GaN HEMT, LC oscillator, output power, phase noise

Abstract

An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.

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Author Biographies

Wen-Cheng Lai, 1 National Yunlin University of Science and Technology, Taiwan, R. O. C. ,2 Dept. of Electronic Eng., National Taiwan University of Science and Technology, Taipei, Taiwan, R. O. C.

Wen-Cheng Lai was born in Taiwan, Republic of China, in 1974. He received Ph.D. degrees in Electronic Engineering from National Taiwan University of Science and Technology in 2015. He joined ASUSTek Computer Inc. in 2015. He joined the Dept. of Electronics, National Penghu Univ. of Sci. and Tech., Taiwan in 2018. In 2020, he is Assistant Professor in National Yunlin University of Science and Technology. He has co-authored more than 200 SCI journal and conference papers in the Radio Frequency circuits design.

Sheng-Lyang Jang, Dept. of Electronic Eng., National Taiwan University of Science and Technology, Taipei, Taiwan, R. O. C.

Sheng-Lyang Jang was born in Taiwan, Republic of China, in 1959. He received B.S. degree from the National Chiao-Tung University, Hsinchu, Taiwan, in 1981, M.S. degree from the National Taiwan University, Taipei, in 1983, and Ph.D. degree from the University of Florida, Gainesville, in 1989. He joined the Noise Research Laboratory at the University of Florida in 1986. In 1989, he joined the Department of Electronics, National Taiwan University of Science and Technology, Taipei, and became a Full Professor in 1993. He has coauthored more than 240 SCI journal papers in the MOSFET devices and circuits. He also holds 17 US.

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Published

2020-09-01

How to Cite

[1]
Wen-Cheng Lai and Sheng-Lyang Jang, “An X-Band GaN HEMT Oscillator with Four-Path Inductors”, ACES Journal, vol. 35, no. 9, pp. 1059–1063, Sep. 2020.

Issue

2020: Vol 35 Iss 9

Section

Articles