Compact Substrate Integrated Waveguide Band-pass Rat-race Couplers Based on Mixed Shape Cavity with Flexible Port Topology

Authors

  • Zhigang Zhang Fundamental Science on Extreme High Frequency Key Laboratory University of Electronic Science and Technology of China, Chengdu 611731, China
  • Yong Fan Fundamental Science on Extreme High Frequency Key Laboratory University of Electronic Science and Technology of China, Chengdu 611731, China
  • Yonghong Zhang Fundamental Science on Extreme High Frequency Key Laboratory University of Electronic Science and Technology of China, Chengdu 611731, China

Keywords:

Band-pass coupler, flexible port topology, mixed shape cavity, negative coupling structure, substrate integrated fan-shaped cavity (SIFC)

Abstract

A new type of compact band-pass rat-race couplers with flexible port topology based on mixed shape substrate integrated waveguide (SIW) cavity is first proposed in this paper. Moreover, composite right/left-handed (CRLH) SIW unit loaded on the common wall between cavities is used to achieve negative coupling structure. The diameter of the vias on the common wall related CRLH-SIW unit is also used to adjust the electric coupling strength and increase the coupling bandwidth. The detailed analysis and the design method have been introduced to realize a filtering rat-race coupler based on substrate integrated fan-shaped cavity (SIFC) and rectangular cavity (SIRC). In particular, the combination of mixed shape resonators and port location in rectangular resonators can be selected according to the requirement of port angle interval. Compared with other filtering couplers, the proposed designs exhibit good filtering responses, high Q factor, better isolation, multiple port angle intervals, amplitude balance, as well as 0° and 180° phase differences.

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Published

2020-04-01

How to Cite

[1]
Zhigang Zhang, Yong Fan, and Yonghong Zhang, “Compact Substrate Integrated Waveguide Band-pass Rat-race Couplers Based on Mixed Shape Cavity with Flexible Port Topology”, ACES Journal, vol. 35, no. 4, pp. 466–477, Apr. 2020.

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