Analysis of the Charge Collection Mechanism of the Diamond Based on a Multi-physics Method
Keywords:
Charge collection efficiency, charge collection mechanism, diamond, drift-diffusion model, semiconductorAbstract
Diamond is one of the most important wide-band-gap semiconductors for radiation detection and electronic device upgrading, however, for the lack of effective quantitative simulation method, the generation, recombination and movement of carriers in this material are still far from fully studied. In this paper, a multi-physics method for quantitative analysis of these complicated processes in diamond is established. Furthermore, charge collection process in a diamond detector with incident protons is quantitatively studied by using this method. It can be concluded that the influence of carrier lifetime on charge collection efficiency (CCE) is saturated when the value of carrier lifetime is greater than the characteristic time for carriers to cover the diamond device. The influence of electric field on CCE is saturated when the value of electric field strength is greater than 1 MV/m. By comparison of the simulated results and the theoretical results of an ideal case, good agreements have been acquired in both saturated electric field and unsaturated electric field conditions. All these results indicate that this method is useful for quantitative simulation and further optimization design of diamond detectors and other devices.
Downloads
References
J. Isberg, J. Hammersberg, E. Johansson, et al., “High carrier mobility in single-crystal plasmadeposited diamond,” Science, vol. 297, pp. 1670- 1672, 2002.
H. Kagan, “Recent advances in diamond detector development,” Nucl. Instr. and Meth. A, vol. 541, pp. 221-227, 2005.
X. Ouyang, L. Wang, R. Fan, et al., “Preparation of diamond film based radiation detector,” Acta. Phys. Sin., vol. 55, no. 5, pp. 2170-2174, 2006.
S. Almaviva, M. Marinelli, E. Milani, et al., “Chemical vapor deposition diamond based multilayered radiation detector: Physical analysis of detection properties,” Journal of Applied Physics, vol. 107, no. 1, p. 014511, 2010.
M. Marinelli, E. Milani, A. Paoletti, et al., “Highquality diamond grown by chemical-vapor deposition: Improved collection efficiency in αparticle detection,” Applied Physics Letters, vol. 75, no. 20, pp. 3216-3218, 1999.
L. Hou, F. Li, Y. Yuan, et al., “Chemical vapor deposited diamond detectors for soft X-ray power measurement,” Acta. Phys. Sin., vol. 59, no. 02, pp. 1137-1141, 2010.
B. Yu, B. Chen, L. Hou, et al., “Hard X-ray measurement for indirect-driven imploding by chemical vapor deposited diamond detectors,” Acta. Phys. Sin., vol. 62, no. 5, p. 058102, 2013.
L. Liu, X. Ouyang, J. Zhang, et al., “Properties comparison between nanosecond X-ray detectors of Polycrystalline and single-crystal diamond,” Diamond & Related Materials, vol. 73, pp. 248-252, 2017.
M. Marinelli, E. Milani, G. Prestopino, et al., “High performance 6 LiF-diamond thermal neutron detectors,” Applied Physics Letters, vol. 297, no. 14, p. 143509, 2002.
L. Liu, X. Ouyang, Z. Zhang, et al., “Polycrystalline chemical-vapor-deposited diamond for fast and ultra-fast neutron detector,” Science China: Technological Sciences, vol. 22, no. 9, pp. 2640-2645, 2012.
X. Chang, Q. Wu, I. Ben-Zvi, et al., “Electron beam emission from a diamond-amplifier cathode,” Physics Review Letters, vol. 105, no. 16, p. 164801, 2010.
L. Liu, X. Ouyang, J. Zhang, et al., “Polycrystalline diamond based detector for Z-pinich plasma diagnosis,” Review of Scientific Instruments, vol. 81, no. 8, p. 083502, 2010.
L. Liu, X. Ouyang, J. Zhang, et al., “Polycrystalline CVD diamond detector: Fast response and high sensitivity with large area,” AIP Advanced, vol. 4, no. 1, pp. 017114, 2014.
X. Wang, J. Wang, and L. Wang, “Single-layer nano-carbon film, diamond film, and diamond/ nano-carbon composite film field emission performance comparison,” Applied Physics Letters, vol. 108, no. 19, p. 191602, 2016.
L. Wang, “Studies on CVD Diamond Detectors for Pulsed Radiation Detection,” Ph.D. Thesis, Tsinghua University, Beijing, China, 2008.
H. K. Gummel, “A self-consistent iterative scheme for one-dimensional steady state transistor calculations,” IEEE Trans. Electron Devices, vol. 9, no. 11, pp. 455-465, 1964.
S. Agostinelli, J. Alison, K. Amoko, and et al., “GEANT4: A simulation toolkit,” Nucl. Instr. and Meth. A, vol. 506, pp. 250-303, 2003.
S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. 3rd edition, New York: John Wiley & Sons, 2006.
L. Ye, Physics of Semiconductor. Beijing, China: Beijing, Higher Education Press, 2007.
J. Wang, D. Zhang, C. Liu, et al., “UNIPIC code for simulation of high power microwave devices,” Physics of Plasma., vol. 16, no. 3, pp. 03310801- 03310810, 2009.
H. Bao, D. Ding, J. Bi, W. Gu, and R. Chen, “An efficient spectral element method for semiconductor transient simulation,” Applied Computational Electromagnetics Society Journal, vol. 31, no. 11, pp. 1337-1342, 2016.
Y. Zhou, L. Shi, N. Liu, C. Zhu, H. Liu, and Q. H. Liu, “Spectral element method and domain decomposition for low frequency subsurface,” IEEE Geosci. Remote Sens. Lett., vol. 13, no. 4, pp. 550-554, 2016.
Y. Zhou, L. Shi, N. Liu, C. Zhu, Y. Sun, and Q. H. Liu, “Mixed spectral-element method for overcoming the low-frequency breakdown problem in subsurface EM exploration,” IEEE Geosci. Remote Sens., vol. 55, no. 6, pp. 3488-3500, 2017.
A. Jameson, “A solution of the Euler equations for two dimensional transonic flow by a multi-grid method,” Applied Mathematics and Computation., vol. 13, pp. 327-355, 1983.
J. V. Soulis, “Finite volume method for threedimensional transonic potential flow through turbomachinery blade rows,” International Journal of Heat and Fluid Flow., vol. 4, no. 2, pp. 85-96, 1983.
K. Hecht, “Zum mechanismus des lichtelektrischen primarstromes in isolierenden kristallen,” Z. Physik, vol. 77, pp. 235-245, 1932.
H. Pernegger, S. Roe, P. Weilhammer, et al., “Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique,” Journal of Applied Physics, vol. 97, no. 07, p. 073704, 2005.
