Analysis and Design of Class E Power Amplifier with Finite DC-Feed Inductance and Series Inductance Network
Keywords:
Broadband, class E power amplifier, finite dc-feed inductance, parasitic inductanceAbstract
With the increasing operation frequency, it is essential to take into account the parasitic parameters of transistor for high efficiency microwave power amplifier design. In this paper, a class E power amplifier with finite dc-feed inductance and series inductance network is analyzed including the parasitic inductance of transistor. The analytical design expressions are derived. And the effects of series inductance on the load network parameter are obtained. The results suggest that this new topology can be used in broadband power amplifiers design by making full use of transistor’s output parasitic inductance. A GaN HEMT power amplifier is designed with the proposed topology for validation purpose. Experimental results show that the amplifier can realize from 2.5 GHz to 3.5 GHz (33.3%) with measured drain efficiency larger than 60% and output power larger than 34 dBm. The measured performance shows good agreement with the theoretical performance predicted by the equations.
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References
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