Fully Distributed Analysis of MOS Transistor at Millimeter-Wave Band, Based on Matrix-Functions of the Three Line Active Transmission Lines Model
Keywords:
Active multi transmission lines, distributed analysis, matrix function, MOS transistor, skin effectAbstract
In this paper, distributed model of MOS transistor is presented that is based on active multi-conductor transmission line model. The analysis is done in frequency domain by considering frequency dependence of primary parameters such as series resistance caused by skin effect. The analysis is performed based on matrix function that is calculated by eigenvalue approach in the frequency domain. The scattering parameters are computed by using transmission matrix and applying boundary conditions. To investigate the analysis, the scattering parameters of a 0.13 ?m transistor are calculated by proposed approach over the 1–100 GHz frequency band. They compared with the results obtained from the available lumped and distributed models and a commercial simulator that have a good agreement with each other.
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