Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method
Keywords:
Heterojunction, Schrödinger equation, spectral element method, transistorAbstract
The spectral element method (SEM) is implemented for the numerical simulation of high electron mobility transistors (HEMTs) through a selfconsistent solution of the Schrödinger-Poisson equations. The electron conduction band structure and electron density distribution are calculated and plotted, and results compared to those based on methods utilizing a finite-difference approach. Simulation accuracy and efficiency are analyzed and compared with traditional finite difference method (FDM). DC current-voltage (I-V) characteristics for the HEMT structure are simulated, based on a quasi-2D current model. The SEM approach offers advantages in speed and efficiency over FDM, while yielding results which conform well to reported experimental results. These advantages are particularly important for compound heterojunction devices with complex material profiles, for which FDM methods may be inefficient and computationally slow.
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References
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