Preparation and Electrical Testing of Double Top Gate Graphene Field-Effect Transistor

Authors

  • Jinbao Huang School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China https://orcid.org/0000-0002-0343-5873
  • Yun Wu Science and Technology on Monolithic Integrated Circuits and Modules, Laboratory, Nanjing Electronic Device Institute, Nanjing 210016, China
  • Bo Su School of Electronic and Optical Engineering Nanjing, University of Science and Technology Nanjing, 210094, China
  • Jingping Liu School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China

DOI:

https://doi.org/10.13052/2022.ACES.J.370704

Keywords:

current characteristics, GCA, graphene, p-n junction, terahertz

Abstract

In this paper, we prepare and test a graphene field-effect transistor with two top gates. The Fermi energy level of graphene can be adjusted by applying positive and negative voltages to the two top gates, and N-type and P-type graphene are formed in the channel region, thus inducing a graphene p-n junction. The current model is established using the gradual channel approximation (GCA) method, and the current and p-n junction characteristics of the device were obtained by formula simulations. Based on the principle of p-n junction luminescence, this device with graphene p-n junction is expected to achieve terahertz wave radiation with an appropriate optical resonant cavity.

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Author Biographies

Jinbao Huang, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Jinbao Huang born in 1999, a native of Luan, Anhui Province, China.

He is a master’s student at the School of Electronic and Optical Engineering, Nanjing University of Science and Technology. His main research interests are terahertz devices.

Yun Wu, Science and Technology on Monolithic Integrated Circuits and Modules, Laboratory, Nanjing Electronic Device Institute, Nanjing 210016, China

Yun Wu works in Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute. His main research interests are terahertz devices.

Bo Su, School of Electronic and Optical Engineering Nanjing, University of Science and Technology Nanjing, 210094, China

Bo Su born in 1997, a native of Xi’an, China.

He got his master’s degree in Optical Engineering from Nanjing University of Science and Technology. His main research interests are terahertz devices.

Jingping Liu, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China

Jingping Liu School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, People’s Republic of China

Her main research areas are antenna design, signal reception, processing, electronic countermeasure technology, and terahertz devices.

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Published

2022-07-31

How to Cite

[1]
J. . Huang, Y. . Wu, B. . Su, and J. . Liu, “Preparation and Electrical Testing of Double Top Gate Graphene Field-Effect Transistor”, ACES Journal, vol. 37, no. 07, pp. 774–781, Jul. 2022.

Issue

2022: Vol 37 Iss 7

Section

General Submission

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