Boundary Element Computation of Line Parameters of On-chip Interconnects on Lossy Silicon Substrate
Keywords:
Boundary Element Computation of Line Parameters of On-chip Interconnects on Lossy Silicon SubstrateAbstract
A BEM formulation is applied to the extraction of series parameters of interconnects on lossy silicon substrate. The numerical formulation can take into account both a semi-infinite homogeneous conductive substrate and a homogeneous conductive substrate of finite thickness with backside metallization and needs the discretization of only the contours of the traces.
Downloads
References
E. Grotelüschen, L. S. Dutta, and S. Zaage,
“Full-Wave Analysis and Analytical
Formulas for the Line Parameters of
Transmission Lines on Semiconductor
Substrates,” Integration, VLSI J., vol. 16, pp.
-58, 1993.
A. G. Chiariello, A. Maffucci, G. Miano, F.
Villone, and W. Zamboni, “High-Frequency
Full-Wave Analysis of Interconnects with
Inhomogeneous Dielectrics through an
Enhanced Transmission Line Model,”
Applied Computational Electromagnetic
Society (ACES) Journal, vol. 23, no. 1, pp. 31
- 38, March 2008.
K. Chatterjee, “A Stochastic Algorithm for
the Extraction of Partial Inductances in IC
Interconnect Structures,” Applied
Computational Electromagnetic Society
(ACES) Journal, vol. 21, no. 1, pp. 81 - 89,
March 2006.
J. Zheng, V. K. Tripathi, and A. Weisshaar,
“Characterization and Modelling of Multiple
Coupled On-Chip Interconnects on Silicon
Substrate,” IEEE Trans. Microwave Theory
Tech., vol. 49, no. 10, 2001.
J. Zheng, Y.-C. Hahm, V. K. Tripathi, and A.
Weisshaar, “CAD-Oriented Equivalent
Circuit Modeling of On-Chip Interconnects
on Lossy Silicon Substrate,” IEEE Trans.
Microwave Theory Tech., vol. 48, pp. 1443-
, 2000.
A. Tripathi, Y. C. Hahm, A. Weisshaar, and
V. K. Tripathi, “A Quasi-TEM Spectral
Domain Approach for Calculating Distributed
Inductance and Resistance of Microstrip on
Si–SiO2 Substrate,” Electron. Lett., vol. 34,
pp. 1330-1331, 1998.
A. Weisshaar, H. Lan, and A. Luoh,
“Accurate Closed-Form Expressions for the
Frequency-Dependent Line Parameters of
On-Chip Interconnects on Lossy Silicon
ACES JOURNAL, VOL. 26, NO. 9, SEPTEMBER 2011
Substrate,” IEEE Adv. Packag., vol. 25, no. 2,
A. Weisshaar and A. Luoh, “Closed-Form
Expressions for the Series Impedance
Parameters of On-Chip Interconnects on
Multilayer Silicon Substrates”, IEEE Adv.
Packag., vol. 27, no. 1, 2004.
L. Di Rienzo, Z. Zhang, and S. A. Pignari,
“Boundary Element Computation of PerUnit-Length Series Parameters of Railway
Lines,” IEEE Trans. Electromagn. Compat.,
vol. 51, no. 3, pp. 825-832, 2009.
J. Shen, Computational Electromagnetics
Using Boundary Elements, Southampton:
CMP, 1995.
C. A. Brebbia, J. C. F. Telles, and L. C.
Wrobel, Boundary Element Techniques. New
York: Springer-Verlag, 1984.
Maxwell 2D v. 11, Ansoft Corporation, 1984-
; software available at:
