A 340-400 GHz Zero-Biased Waveguide Detector Using a Self-Consistent Method to Extract the Parameters of Schottky Barrier Diode
关键词:
Detector, effective capacitance, InGaAs/InP, low barrier, modeling technology, parameter extraction, Schottky barrier diode摘要
A type of low-barrier Schottky barrier diode (SBD), based on InGaAs/InP, is designed and fabricated, and then a 340-400 GHz zero-biased waveguide detector utilizing this diode is proposed. To predict the performance of the SBD, firstly we present a self-consistent analytical method to find the accurate values of the parameters of the SBD by using the on-wafer measured S-parameter under different bias conditions up to 40 GHz and an auxiliary de-embedding structure. The extracted values show a very good agreement with the theoretical values. Then a concept called effective capacitance is proposed to model the high frequency (340-400 GHz) properties of the SBD. This concept has greatly improved the consistency of the simulated and measured results of the detector. The measured maximum voltage responsivity and the minimum noise effective power (NEP) of the detector are 800 mV/mW and 3.46×10-11 W/Hz0.5 at 382 GHz, respectively
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