Design of W-band PIN Diode SPDT Switch with Low Loss

作者

  • Yun Jiang State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System College of Electronic Science, National University of Defense Technology, Changsha, 410073, China
  • Yuan Ye State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System College of Electronic Science, National University of Defense Technology, Changsha, 410073, China
  • Daotong Li Center of Communication and Tracking Telemetry Command, Chongqing University, Chongqing, 400000, China
  • Zhaoyu Huang State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System College of Electronic Science, National University of Defense Technology, Changsha, 410073, China
  • Chao Wang State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System College of Electronic Science, National University of Defense Technology, Changsha, 410073, China
  • Jingjian Huang State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System College of Electronic Science, National University of Defense Technology, Changsha, 410073, China
  • Naichang Yuan State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System College of Electronic Science, National University of Defense Technology, Changsha, 410073, China

关键词:

Insertion loss, isolation, PIN diode, SPDT switch, switch fall time, switch rise time, W-band, waveguide-microstrip transition

摘要

A W-band PIN diode single pole double throw (SPDT) switch with low insertion loss (IL) was successfully developed using a hybrid integration circuit (HIC) of microstrip and coplanar waveguide (CPW) in this paper. In order to achieve low loss of the SPDT switch, the beam-lead PIN diode 3D simulation model was accurately established in Ansys High Frequency Structure Simulator (HFSS) and the W-band H-plane waveguide-microstrip transition was realized based on the principle of the magnetic field coupling. The key of the proposed method is to design the H-plane waveguide-microstrip transition, it not only realizes the low IL of the SPDT switch, but also the direct current (DC) bias of the PIN diode can be better grounded. In order to validate the proposed design method, a W-band PIN diode SPDT switch is fabricated and measured. The measurement results show that the IL of the SPDT switch is less than 2 dB in the frequency range of 85 to 95 GHz, while the isolation of the SPDT switch is greater than 15 dB in the frequency range of 89.5 to 94 GHz. In the frequency range of 92 to 93 GHz, the IL of the SPDT switch is less than 1.65 dB, and its isolation is higher than 22 dB. Switch rise time and switch fall time of the SPDT switch are smaller than 29ns and 19ns, respectively. Good agreement between the simulations and measurements validates the design method.

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##submission.authorBiographies##

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Yun Jiang was born in Hunnan Provence, China. He received the M.S. degrees in Electronic Engineering from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2017, and currently he is working toward the Ph.D. degree in National of Defense University. His research interests include RF/millimeter-wave components and circuits.

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Yuan Ye was born in Guangxi, China. She received the M.S. degree in Sun Yat-sen University, Guangzhou, China, in 2012, and currently she is working toward the Ph.D. degree in National University of Defense Technology. Her current research interests include ultrawideband antenna Arrays and reconfigurable antenna.

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Daotong Li (S’15-M’16) received the Ph.D. degree in Electromagnetic Field and Microwave Technology from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2016. He is currently an Associate Professor with the Center of Communication and Tracking Telemetry Command, Chongqing University, Chongqing. Since 2015, he has been a Visiting Researcher with the Department of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, Urbana, IL, USA, with financial support from the China Scholarship Council. He has authored or coauthored over 70 peer-reviewed journal or conference papers.
His current research interests include RF, microwave and millimeter-wave technology and applications, microwave power transmission (MPT), antennas, devices, circuits and systems, and passive and active (sub-) millimeter-wave imaging and radiometer. Li was a recipient of the UESTC Outstanding Graduate Awards by the Sichuan province and UESTC in 2016. He was a recipient of the National Graduate Student Scholarship from the Ministry of Education, China, and “Tang Lixin” Scholarship. He is serving as a Reviewer for several IEEE and IET journals, and many international conferences as a TPC Member, a Session Organizer, and the Session Chair.

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Zhanyu Huang was born in 1992. He received the M.S. degree in Electronics and Communication Engineering from the University of Electronic Science and Technology of China, Chengdu, China in 2018, where he is currently pursuing Ph.D. degree with the College of Electronic Science and Engineering, National University of Defense Technology, Changsha, China. His current research interests include passive RF/microwave circuits, microstrip antennas and wireless communication.

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Chao Wang was born in 1977. He received the Ph.D. degree from the National University of Defense Technology, Changsha, in 2007. He is currently an Associate Professor with the National University of Defense Technology. His research interest is electronic system design.

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Jinjian Huang is now working in National University of Defense Technology. He received the Ph.D. degree of Electronics Science and Technology from National University of Defense Technology, Changsha, China in 2014. His research interests include ultra-wide band antenna and phase array antenna.

##submission.authorWithAffiliation##

Naichang Yuan was born in Anhui, China, in 1965. He received the M.S. and Ph.D. degrees in Electronic Science and Technology from the University of Electronic Science and Technology of China in 1991 and 1994, respectively. He is currently a Professor with the National University of Defense Technology. His research interests include array signal processing, radar system design, SAR/ISAR imaging and electronic countermeasures.

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已出版

2021-10-31

##submission.howToCite##

[1]
Y. . Jiang, 《Design of W-band PIN Diode SPDT Switch with Low Loss》, ACES Journal, 卷 36, 期 07, 页 901–907, 10月 2021.

期

2021: Vol 36 Iss 7

栏目

General Submission