Transient Electro-Thermal Analysis of a Common Source Amplifier Circuit with a Physics-based MOSFET Model
关键词:
Amplifier, electro-thermal characteristics, MOSFET, SETD, transient simulation摘要
An algorithm that combines a common source amplifier with the physics-based metal-oxidesemiconductor field effect transistor (MOSFET) model is proposed. By solving the coupled drift-diffusion model equations with spectral element time-domain (SETD) method, the distribution of electron quasi-Fermi potential, hole quasi-Fermi potential and the potential inside the MOSFET is obtained. The corresponding current densities and electric intensities distributed in the device can be used to couple the heat conduction equation. Furthermore, the Kirchhoff laws should be satisfied when the MOSFET device is inserted in the circuit. The Newton-Raphson method is used to solve the nonlinear circuit equations due to the existence of semiconductor devices. The transient electro-thermal characteristics of a common source amplifier circuit have been analyzed, and the numerical results demonstrate the validity of the proposed method.
##plugins.generic.usageStats.downloads##
参考
H. A. Mantooth and J. L. Duliere, “A unified diode model for circuit simulation,” IEEE Trans. Power Electron., vol. 12, no. 5, pp. 816-823, Sep. 1997.
K. Kranti, “Microwave-frequency non-linear universal model for PIN diode,” in Proc. IWPSD, pp. 119-122, 2007.
C. C. Enz and Y. Cheng, “MOS transistor modeling for RF IC design,” IEEE Trans. Solid-State Circuits, vol. 35, no. 2, pp. 186-201, Feb. 2000.
M. Pokorny and Z. Raida, “Multi-physics model of Gunn diode,” in Proc.17th Int. Conf. MIKON, pp. 1-4, May 19-21, 2008.
K. Shinohara and Q. Yu, “Reliability evaluation of power semiconductor devices using coupled analysis simulation,” in Proc. 12th IEEE Intersoc. Conf. Thermal Thermomech. Phenom. Electron. Syst., pp. 1-9, June 2-5, 2010.
Z. Ren, W. Y. Yin, Y. B. Shi, and Q. H. Liu, “Thermal accumulation effects on the transient temperature responses in LDMOSFETs under the impact of a periodic electromagnetic pulse,” IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 345-352, Jan. 2010.
S. Yan, A. Greenwood, J. M. Jin, “Modeling of plasma formation during high-power microwave breakdown in air using the discontinuous Galerkin time-domain method,” [J]. IEEE Journal on Multiscale & Multiphysics Computational Techniques, 1:2-13, 2017.
X. Chen, J. Chen, K. Huang, and X. B. Xu, “A circuit simulation method based on physical approach for the analysis of Mot_bal99lt1 p-i-n diode circuits,” IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 2862-2870, Sep. 2011.
J. Chen, X. Chen, C. J. Liu, K. Huang, and X. B. Xu, “Analysis of temperature effect on p-i-n diode circuits by a multiphysics and circuit cosimulation algorithm,” IEEE Trans. Electron Devices, vol. 59, no. 11, pp. 3069-3077, Nov. 2012.
J.-H. Lee and Q. H. Liu, “A 3-D spectral-element time-domain method for electromagnetic simulation,” IEEE Trans. Microw. Theory Tech., vol. 55, no. 5, pp. 983-991, May 2007.
I. Mahariq, M. Kuzuoglu, I. H. Tarman, and H. Kurt, “Photonic nanojet analysis by spectral element method,” IEEE. Photonics Journal, vol. 6, no. 5, pp. 85-90, Oct. 2014.
J.-H. Lee and Q. H. Liu, “An efficient 3-D spectral-element method for Schrödinger equation in nanodevice simulation,” IEEE Trans. Computer Aided Design of Integrated Circuits and Systems, vol. 24, no. 12, pp. 1848-1858, Dec. 2005.
Y. Sheng, K. Xu, D. Wang, and R. S. Chen, “Performance analysis of FET microwave devices by use of extended spectral-element time-domain method,” International Journal of Electronics, vol. 100, no. 5, pp. 699-717, May 2013.
K. Xu, R. S. Chen, Y. Sheng, P. Fu, C. Chen, Q. Yan, and Y. Y. Yu, “Transient analysis of microwave Gunn oscillator using extended spectral element time domain method,” Radio Science, vol. 46, no. 5, pp. 369-380, Sep. 2011.
R. E. Bank, D. J. Rose, and W. Fichtner, “Numerical methods for semiconductor device simulation,” IEEE Trans. Electron Devices, vol. 30, no. 9, pp. 1031-1041, Sep. 1983.
W. Fichtner, D. J. Rose, and R. E. Bank, “Semiconductor device simulation,” IEEE Trans. Electron Devices, vol. 30, no. 9, pp. 1018-1030, Sep. 1983.
S. Rzepka, K. Banerjee, E. Meusel, and C. Hu, “Characterization of self-heating in advanced VLSI interconnect lines based on thermal finite element simulation,” IEEE Trans. Compon. Packag. Manuf. Technol. A, vol. 21, no. 3, pp. 406-411, Sep. 1998.
R. Sayyah, M. Hunt, T. Macleod, and F. D. Ho, “Modeling a common-source amplifier using a ferroelectric transistor,” Integrated Ferroelectrics: An International Journal, vol. 124, no. 1, pp. 147-156, 2011.
S. Chen, D. Ding, and R. Chen, “A hybrid volume– surface integral spectral-element time-domain method for nonlinear analysis of microwave circuit,” [J]. IEEE Antennas and Wireless Propagation Letters, vol. 16, pp. 3034-3037, 2017.
