An Efficient Spectral Element Method for Semiconductor Transient Simulation
关键词:
Gauss-Lobatto-Legendre (GLL) polynomials, mix-order basis function, PIN diode, Spectral Element Method (SEM)摘要
An efficient spectral element method (SEM) based on Gauss-Lobatto-Legendre (GLL) polynomials is proposed for the semiconductor transient simulation. The fully coupled Newton iteration method is employed to solve the nonlinear drift-diffusion model. The mixorder basis functions with different variables and domains are employed to give a full play to the superiority of the proposed SEM. The PIN diode with quasi onedimensional structure has been analyzed, and the numerical results have demonstrated the efficiency and accuracy of the proposed method.
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参考
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