On-Wafer Measurement and Modeling of Silicon Carbide MESFET’s
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On-Wafer Measurement and Modeling of Silicon Carbide MESFET’sAbstract
The goal of this work was to characterize Silicon Carbide (SiC) transistor devices, with measurements and modeling using an advanced software package. To characterize and model the SiC Metal- Semiconductor Field-Effect Transistors (MESFETs), onwafer measurements of the transistors were performed and their behavior was characterized. The transistors were measured using a vector network analyzer in conjunction with a probing station to make contact with the individual devices on the wafers. Once measurements were complete and typical performance characteristics found, equivalent circuit models were designed and the components optimized to create equivalent circuits with matching characteristics.
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