A 3 dB Coupler With Defected Ground Structure for Feeds Applied to High-Power Intelligent Metasurface

Authors

  • Weidong Kong School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China, Hebei Semiconductor Research Institute Shijiazhuang 050051, China
  • Jinyu Wang School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China
  • Shixiong Deng Hebei Semiconductor Research Institute Shijiazhuang 050051, China
  • Qiaonan Wang School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China, Hebei Semiconductor Research Institute Shijiazhuang 050051, China
  • Leiqiang Ma Southwest China Research Institute of Electronic Equipment Chengdu, China
  • Biao Zhou Hebei Semiconductor Research Institute Shijiazhuang 050051, China
  • Xuefeng Song Hebei Semiconductor Research Institute Shijiazhuang 050051, China
  • Kuang Zhang School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China
  • Guohui Yang School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China
  • Yang Li School of Integrated Circuits Shandong University, Shandong 250100, China
  • Cong Wang School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China

DOI:

https://doi.org/10.13052/2026.ACES.J.410206

Keywords:

3 dB coupler, defected ground structure (DGS), high power, metasurface

Abstract

This paper proposes a 3 dB coupler with high-power handling capability feeds applied to high-power intelligent metasurface, based on loosely coupled structures and defected ground structure (DGS). The proposed coupler structure consists of two tandem coupled couplers with a coupling coefficient of 8.34 dB and a DGS, a design that significantly enhances the couplers’ ability to handle high power levels. The measurement results are in good agreement with the simulation results: within the 3.5 to 4.5 GHz range, the return loss exceeds 21.4 dB, the isolation is at least 20.8 dB, the insertion loss is less than 0.3 dB, and the phase difference between output ports is 93–94.5∘. Furthermore, the coupler can handle high power exceeding 1.5 kW with a 10% duty cycle. The proposed 3 dB coupler features low insertion loss, high isolation, low return loss, high-power capability, and can improve the power capability of intelligent metasurface systems.

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Author Biographies

Weidong Kong, School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China, Hebei Semiconductor Research Institute Shijiazhuang 050051, China

Weidong Kong received the B.E. and M.E. degrees in Electronics and Information Engineering from Harbin Institute of Technology University, China, in 2014 and 2016, respectively. He is currently pursuing a Doctor of Engineering degree with a specialization in Electronics and Information at Harbin Institute of Technology University.

Jinyu Wang, School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China

Jinyu Wang is currently pursuing the M.E. degree at Harbin Institute of Technology, China. His research specializes in microwave power amplifiers and filter design.

Shixiong Deng, Hebei Semiconductor Research Institute Shijiazhuang 050051, China

Shixiong Deng received the M.E. degree from Beihang University, China, in 2014 and the Ph.D. degree from National University of Defense Technology in 2024. His research focuses on microwave limiters and electromagnetic protection.

Qiaonan Wang, School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China, Hebei Semiconductor Research Institute Shijiazhuang 050051, China

Qiaonan Wang received the M.E. degree from the University of Electronic Science and Technology of China. His research interests include microwave voltage-controlled attenuators and microwave filter design.

Leiqiang Ma, Southwest China Research Institute of Electronic Equipment Chengdu, China

Leiqiang Ma received the M.E. degree in Electronics and Information Engineering from Harbin Institute of Technology, China, in 2015. His research focuses on microwave receiver module design.

Biao Zhou, Hebei Semiconductor Research Institute Shijiazhuang 050051, China

Biao Zhou received the M.E. degree from Hebei Semiconductor Research Institute, China, in 2009. His research interests include microwave active phased array systems.

Xuefeng Song, Hebei Semiconductor Research Institute Shijiazhuang 050051, China

Xuefeng Song received the M.E. degree from Hebei Semiconductor Research Institute, China. His research specializes in microwave semiconductor chips.

Kuang Zhang, School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China

Kuang Zhang (Member, IEEE) received the B.Sc. degree in electronics and information engineering, the M.Eng. degree in electronics engineering, and the Ph.D. degree in communication and information systems from Harbin Institute of Technology (HIT), Harbin, China, in 2005, 2007, and 2011, respectively. He was a Visiting Professor with the University of Wisconsin-Madison, Madison, WI, USA, from 2015 to 2016. Since 2010, he has been with the Department of Microwave Engineering, School of Electronics and Information Engineering, HIT, where he is currently a Professor.

Guohui Yang, School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China

Guohui Yang (Member, IEEE) received the B.S. degree in telecommunication, the M.S. degree in instrument science and technology, and the Ph.D. degree in electromagnetics from the Harbin Institute of Technology, Harbin, China, in 2003, 2006, and 2009, respectively. Since 2009, he has been with the Department of Microwave Engineering, Harbin Institute of Technology, where he is currently an Associate Professor. His current research interests are radio frequency micro electromechanical system (RF MEMS) devices, tunable antennae, frequency selective surface (FSS), electromagnetic compatibility (EMC), and final difference time domain (FDTD).

Yang Li, School of Integrated Circuits Shandong University, Shandong 250100, China

Yang Li (Senior Member, IEEE) received the Ph.D. degree from the Department of Electronic, Kwangwoon University, Seoul, South Korea, in 2015. He has been a Professor at the School of Microelectronics at Shandong University, Jinan, China, since 2022. His research interests include nanostructured flexible materials, flexible electronics, gas sensors, and memristors.

Cong Wang, School of Electronic & Information Engineering Harbin Institute of Technology, Harbin 150001, China

Cong Wang (Senior Member, IEEE) was born in Qingdao, Shandong, China, in 1982. He received the B.S. degree in automation engineering from Qingdao Technological University, Qingdao, in 2005, and the M.S. and Ph.D. degrees in electronic engineering from Kwangwoon University, Seoul, South Korea, in 2008 and 2011, respectively. Since 2016, he has been with the Department of Microwave Engineering, Harbin Institute of Technology, Harbin, where he is currently a Professor. His major interests include passive device design and fabrication, humidity sensors, and biosensors.

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Published

2026-02-20

How to Cite

[1]
W. . Kong, “A 3 dB Coupler With Defected Ground Structure for Feeds Applied to High-Power Intelligent Metasurface”, ACES Journal, vol. 41, no. 02, pp. 155–161, Feb. 2026.

Issue

2026: Vol 41 Iss 2

Section

Advances in Next-Generation Antenna Systems and Their Testing Methodologies

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