Comparison of Different Ways of Extra Phosphorus Implantation Which Decrease the Threshold Voltage and On-resistance of UMOS
Keywords:
Extra phosphorus implantation, on-resistance, threshold voltage, UMOSAbstract
A method to decrease the threshold voltage and on-resistance is discussed in this paper, which is adding extra phosphorus implantation into silicon. There are two ways to implant extra phosphorus without adding a mask. The first way is to implant extra phosphorus after the field oxide etching, and the second way is to implant extra phosphorus with the source region mask before the N+ implantation. Compare the results of the two ways to find their characteristics and choose the appropriate one.
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