Comparison of Different Ways of Extra Phosphorus Implantation Which Decrease the Threshold Voltage and On-resistance of UMOS
关键词:
Extra phosphorus implantation, on-resistance, threshold voltage, UMOS摘要
A method to decrease the threshold voltage and on-resistance is discussed in this paper, which is adding extra phosphorus implantation into silicon. There are two ways to implant extra phosphorus without adding a mask. The first way is to implant extra phosphorus after the field oxide etching, and the second way is to implant extra phosphorus with the source region mask before the N+ implantation. Compare the results of the two ways to find their characteristics and choose the appropriate one.
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参考
M. Shi and M. Li, Semiconductor Devices Physics and Technology. 3rd ed., Soochow University Press, 2014.
L. Feng, “Threshold voltage model of short-channel MOSFETs,” Changsha: National University of Defense Technology, 2006.
D. Ma, “Study of novel structure and mechanism of trench type ultra-low specific on-resistance power device,” Chengdu: University of Electronic Science and Technology of China, 2017.
Q. Chen, “The characteristics research of 75V trench power MOSFET,” Chengdu: Southwest Jiaotong University, 2013.
B. J. Baliga, Fundamentals of Power Semiconductor Devices. Springer Science & Business Media, 2008.
L. Zhao and Q. Feng, “A novel high voltage MOSFET with double trench gate,” Microelectronics, vol. 49, no. 2, Apr. 2019.
