Interval-Based Robust Design of a Microwave Power Transistor
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Interval-Based Robust Design of a Microwave Power Transistor摘要
An interval-based approach aimed at the robust design of a specific performance of a Double Hetero-junction Bipolar Transistor (DHBT) for microwaves applications is presented. The robust design is obtained by looking at the range of the performance function by means of an overestimation, given in analytical form, of its amplitude. The proposed approach is described by referring to two theoretical performance functions to show the reliability for both the univariate and multivariate cases. The worst case approach is considered in order to study the minimum variation of the max oscillation frequency of the DHBT, obtained by a regression model from numerical results, in presence of given parameters variations. The physical and geometrical parameters affecting the performance are regarded as implicitly uncorrelated and uniformly distributed in an assigned range and therefore all their combinations are kept into account. The implemented approach permits to achieve a greater robustness of the solution without assuming approach-specific settings and additional computations dependent on designer’s ability and can be used to maximize the production yield.
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