High Sensitivity Non-split Drain MAGFET for Wireless Sensor Networks

Authors

  • Rattapong Nakachai Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand https://orcid.org/0000-0002-9114-3730
  • Amporn Poyai Thai Microelectronics Center, Design & Engineering Consulting Service Center (DECC), National Science and Technology Development Agency (NSTDA), Thailand
  • Toempong Phetchakul Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

DOI:

https://doi.org/10.13052/jmm1550-4646.16123

Keywords:

Non-split drain, MAGFET, TCAD, magnetic sensor, Lorentz’s force

Abstract

The non-split drain MAGFET proposed in this paper is aspossess an ideal, highest sensitivity in the same type of device, current mode for low power, and low voltage that can be embedded within a system for wireless sensor networks application. It is a split-drain MAGFET that is designed to have no gap between drains so that there is no loss from the gap. There are two split contacts in one drain to represent the split drains for current difference that induced from due to magnetic field. The relative sensitivity comparison among all the gaps (3, 2, 1, and 0 μm) with all aspect ratio of width (W)/length (L) (L/W = 1, 0.6, and 0.2) at biased current 0.25 mA shows that the zero gap or the non-split drain MAGFET structure gives the highest sensitivity. The sensitivities of the non-split drain at the aspect ratios L/W = 1, 0.6, and 0.2 in this study are 0.0595, 0.0479, and 0.0231 T−1, respectively. It is proved that the gap is not necessary for the MAGFET. It is a new, smart way to design the MAGFET for the highest sensitivity and gap lossless for modern sensor applications.

Downloads

Download data is not yet available.

Author Biographies

Rattapong Nakachai, Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Rattapong Nakachai received his B.S. degree in electrical engineering from the Kasetsart University, Thailand in 2003, and the M.S. degree in electronics engineering from the King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand in 2008. His research interest areas are electronics engineering, computer programming, and semiconductor devices and sensors.

Amporn Poyai, Thai Microelectronics Center, Design & Engineering Consulting Service Center (DECC), National Science and Technology Development Agency (NSTDA), Thailand

Amporn Poyai received his B.Sc. degree in physics from the Silpakorn University, Bangkok, Thailand in 1991, the M.S. degree in electrical engineering from the King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand in 1994, and the Ph.D. degree in electrical engineering from the Katholieke University of Leuven, Leuven, Belgium in 2002. His research is emphasized on design, simulation, fabrication and characterization of semiconductor device, microfabrication technology, and integrated circuits. He worked at the Thai Microelectronic Center (TMEC) and now he is currently working at the Design & Engineering Consulting Service Center (DECC) as part of the National Science and Technology Development Agency (NSTDA), Thailand.

Toempong Phetchakul, Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Toempong Phetchakul received his B.S. degree in electronic engineering, and the M.S. degree in electrical engineering from the King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand, and the D.Eng. degree in solid state device engineering from the Tokai University, Japan. His research interests are in design, simulation, fabrication and characterization of semiconductor device, and semiconductor sensors on integrated circuits. He is currently working at the Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand.

References

Lenz and A. Edelstein, “Magnetic Sensors and Their Application”, IEEE Sensors Journal, Vol. 6 No. 3, 2006, pp. 631–649.

A. Daubaras, M. Zilys, “Vehicle Detection based on Magneto-Resistive Magnetic Field Sensor”. Electronics and Electrical Engineering, Kaunas: Technologija, 2012, No. 2(118), pp. 27–32.

Haji Said Fimbombaya, Nerey H. Mvungi, Ndyetabura Y. Hamisi and Hashimu U. Iddi, “Performance Evaluation of Magnetic Wireless Sensor Networks Algorithm for Traffic Flow Monitoring in Chaotic Cities”. Modelling and Simulation in Engineering Vol. 2018, Article ID 2591304, 11 pages.

Vlada Velisavljevic, Eduardo Cano, Vladimir Dyo and Ben Allen, “Wireless Magnetic Sensor Network for Road Traffic Monitoring and Vehicle Classification”. Transport and Telecommunication, 2016, Vol. 17, No. 4, 274–288.

Gerard F. Santillan-Quinonez, Victor Champac and Roberto S. Murphy, “Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs”, Solid-State Electronics 54 2010, pp. 1239–1245.

Rodrigo Rodríguez-Torres and Edmundo A. Gutiérrez-Domínguez, “Analysis of Split-Drain MAGFETs”, IEEE Transactions on Electron Devices, Vol. 51, No. 12, December 2004, pp. 2237–2245.

Z. Xiaofeng, W. Dianzhong, L. Meiwei, G. Hanyu and L. Gang, Fabrication and characterization of the split-drain MAGFET based on the nano-polysilicon thin film transistor, J. Semicond, Vol. 35, No. 9, 2014, pp. 094004-1–094004-6.

Guo Qing, Zhu Dazhong and Yao Yunruo “CMOS magnetic sensor integrated circuit with sectorial MAGFET”, Sensors and Actuators A 126 2006, pp. 154–158.

Shuk-Fun Lai, Wing-Kong Ng, Wing-Shan Tam, Chi-Wah Kok and Hei Wong “A Low Power CMOS Magnetic Field Sensor consisting of a MAGFET and a Pulse Width Modulated Readout Circuit” 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), October 18–20, 2017, Hsinchu, Taiwan.

J. Marek, D. Donoval, M. Donoval, M. Daricek “Analysis of Novel MagFET Structures for Built-in Current Sensors Supported by 3D Modeling and Simulation” ASDAM 2008, The Seventh International Conference on Advanced Semiconductor 315 Devices and Microsystems, October 12–16, 2008, Smolenice Castle, Slovakia.

S. R. Ashwin, S. Sreejith, U. Sajeshkumar, “TCAD Design of Tunnel FET Structures and Extraction of Electrical Characteristics”, International Journal of Science and Research (IJSR) ISSN (Online): 2013, pp. 2319–7064.

Maria-Alexandra Paun, Jean-Michel Sallese and Maher Kayal “Hall Effect Sensors Design, Integration and Behavior Analysis” Journal of Sensor and Actuator Networks 2(1):85–97 March 2013.

Nebojša Janković, Sanja Aleksić and Dragan Pantić “Simulation and Modeling of Integrated Hall Sensor Devices” Proceedings of Small Systems Simulation Symposium 2012, NiŽ, Serbia, 12th–14th February 2012 pp. 85–92.

TCAD Sentaurus Manual, sysnopsis®, version D-2016.03.

R. S. Popovic, “Hall Effect Devices” 2nd ed., IoP Publishing Ltd., London, 2004.

E. Sifuentes, O. Casas, and R. Pallas-Areny “Wireless Magnetic Sensor Node for Vehicle Detection With Optical Wake-Up” IEEE Sensors Journal, Vol. 11, No. 8, August 2011, pp. 1669–1676.

Downloads

Published

2020-08-20

How to Cite

Nakachai, R., Poyai, A., & Phetchakul, T. (2020). High Sensitivity Non-split Drain MAGFET for Wireless Sensor Networks. Journal of Mobile Multimedia, 16(1-2), 45–64. https://doi.org/10.13052/jmm1550-4646.16123

Issue

Section

Smart Innovative Technology for Future Industry and Multimedia Applications

Most read articles by the same author(s)