Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors

Authors

  • Khine Thandar Nyunt Swe Department of Electronics, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
  • Chanvit Pamonchom Department of Electronics, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
  • Amporn Poyai Design & Engineering Consulting Service Center (DECC), National Science and Technology Development Agency (NSTDA), Thailand
  • Toempong Phetchakul Department of Electronics, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand https://orcid.org/0000-0002-9114-3730

DOI:

https://doi.org/10.13052/jmm1550-4646.18416

Keywords:

MAGFinFET, FinFET, MAGFET, Lorentz’s force, TCAD

Abstract

This paper presents a new magnetic detection device, MAGFinFET, which is based on the advanced 3D FinFET structure. It can measure the vertical magnetic field by designing two contacts on both sides of the drain. The operation uses the principle of the current mode of Hall effect causing the deflection of the drain currents at both contacts. The 3D geometry effect was studied: channel length, fin height and fin width. It can be seen that when the values of these parameters are increased, the differential currents and relative sensitivities are increased linearly. Relative sensitivity has the highest value 0.00201 T−1-1 at channel length 50 nm. Fin height and fin width of 50 nm give the highest sensitivity of 0.00468 T−1-1 and 0.00415 T−1-1 respectively. Current density distributions of the different variations of each parameter Lgg, Fhh and Fww are observed by applying vertical magnetic field on the device. The 3D-MAGFinFET has been compared to that of the 2D non-split drain MAGFET structure and bulk fin resistor that use n-type semiconductor instead of induction channel. MAGFinFET shows quite higher sensitivity compared to bulk fin resistor. MAGFinFET mechanism models and simple characteristic equations are proposed in this work. Sentaurus TCAD is used for the device structure and simulation for the characteristics of MAGFinFET. This FinFET based device can be fabricated with modern integrated circuit technology.

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Author Biographies

Khine Thandar Nyunt Swe, Department of Electronics, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Khine Thandar Nyunt Swe received the B.E. degree in electronic engineering from Technological University (Magway), Myanmar in 2013 and the M.E. degree in electronic engineering from Yangon Technological University, Yangon, Myanmar in 2017. Her research interests are in digital image processing, semiconductor devices and sensors.

Chanvit Pamonchom, Department of Electronics, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Chanvit Pamonchom received the B.S. degree in Bachelor of Engineering in Mechatronics Engineering Rajamangala University of Technology Rattanakosin, Nakhon Pathom, Thailand in 2015 and the M. E. degree in electronic engineering from King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand in 2021. His research interest areas are electronics circuit design, computer programming, medical instruments, robotics, semiconductor devices, and semiconductor sensors.

Amporn Poyai, Design & Engineering Consulting Service Center (DECC), National Science and Technology Development Agency (NSTDA), Thailand

Amporn Poyai received the B.Sc. degree in physics from Silpakorn University, Bangkok, Thailand in 1991, the M.S. degree in electrical engineering from King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand in 1994, and the Ph.D. degree in electrical engineering from Katholieke University of Leuven, Leuven, Belgium in 2002. His research is emphasized on design, simulation, fabrication and characterization of semiconductor device, microfabrication technology and integrated circuit. He worked at Thai Microelectronic Center (TMEC) and now he is currently working at Design & Engineering Consulting Service Center (DECC) as part of the National Science and Technology Development Agency (NSTDA), Thailand.

Toempong Phetchakul, Department of Electronics, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Toempong Phetchakul received the B. S. degree in electronic engineering in 1989, the M. S. degree in electrical engineering in 1992 from King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand and the D. Eng degree in solid state device engineering from Tokai University, Japan in 1997. His research interests are in design, simulation, fabrication and characterization of semiconductor device, semiconductor sensors on integrated circuit. He is currently working at the Department of Electronics, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand.

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Published

2022-03-21

How to Cite

Swe, K. T. N. ., Pamonchom, C. ., Poyai, A. ., & Phetchakul, T. . (2022). Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors. Journal of Mobile Multimedia, 18(04), 1301–1332. https://doi.org/10.13052/jmm1550-4646.18416

Issue

2022: Vol 18 Iss 4

Section

ICEAST 2020