A Novel Dual Magnetodiode for Wireless Sensor Networks

Authors

  • Chalin Sutthinet Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
  • Amporn Poyai Thai Microelectronics Center, Design & Engineering Consulting Service Center (DECC), National Science and Technology Development Agency (NSTDA), Thailand
  • Toempong Phetchakul Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand https://orcid.org/0000-0002-9114-3730

DOI:

https://doi.org/10.13052/jmm1550-4646.16122

Keywords:

p–n junction, magnetic sensor, carrier deflection, diode, magnetodiode, Lorentz’s force, TCAD

Abstract

This paper presents a new magnetodiode, the so-called dual magnetodiode, for wireless sensor application. The device is a current mode which can be integrated with a chip compatible with modern low power, low voltage integrated circuit (IC). The structure and operation are completely different from a conventional magnetodiode. The structure is composed of two p–n junctions in that one region is common and the others are split terminals for output of differential current. The underlying mechanism is carrier deflection by induced force from a magnetic field. The carriers are injected from the common region by forward bias. The defection carriers diffuse, deflect, and recombine along substrate through split terminals according to direction and density of the magnetic field linearly and symmetrically. From the comparison of complementary structure of the split cathode and the split anode structure of LD = 50 μm, the bias current 1 mA and magnetic field 0.5 T, the relative sensitivities (SR) are 11.01 and 11.19 T−1, respectively. This device is a simple p–n junction structure which is compatible with all micro/nanotechnology.

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Author Biographies

Chalin Sutthinet, Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Chalin Sutthinet received his B.S. degree in electronic engineering from the Southeast Asia University, Bangkok, Thailand in 1995 and the M.S. degree in microelectronics engineering from the King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand in 2013.

His research interest areas are automation control engineering, internet of things, data science, artificial intelligence, virtual reality, semiconductor devices, and sensors.

Amporn Poyai, Thai Microelectronics Center, Design & Engineering Consulting Service Center (DECC), National Science and Technology Development Agency (NSTDA), Thailand

Amporn Poyai received his B.Sc. degree in physics from the Silpakorn University, Bangkok, Thailand in 1991, the M.S. degree in electrical engineering from the King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand in 1994, and the Ph.D. degree in electrical engineering from the Katholieke University of Leuven, Leuven, Belgium in 2002.

His research is emphasized on design, simulation, fabrication and characterization of semiconductor device, microfabrication technology, and integrated circuit. He worked at the Thai Microelectronics Center (TMEC) and now is currently working at the Design & Engineering Consulting Service Center (DECC) as part of the National Science and Technology Development Agency (NSTDA), Thailand.

Toempong Phetchakul, Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Toempong Phetchakul received his B.S. degree in electronic engineering, the M.S. degree in electrical engineering from the King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand, and the D.Eng degree in solid state device engineering from the Tokai University, Japan.

His research interests are in design, simulation, fabrication and characterization of semiconductor device, and semiconductor sensors on integrated circuit. He is currently working at the Department of Electronics, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

References

O. Kanoun and H. Trankler, ‘Sensor technology advances and future trends’, IEEE Transactions on Instrumentation and Measurement, vol. 53, pp. 1497-1501, 2004.

S. Shenghe, ‘Development trend of modern sensor’, Journal of Electronic Measurement and Instrument, vol. 1, pp. 1-10, 2009.

L. Zheng, ‘Industrial wireless sensor networks and standardizations: The trend of wireless sensor networks for process automation’, Proceedings of SICE Annual Conference 2010, pp. 1187-1190, 2010.

K. E. Skouby, I. William, and A. Gyamfi, Handbook on ICT in developing countries: 5G perspective: River Publishers, 2017.

M. Chen, C.-F. Lai, and H. Wang, ‘Mobile multimedia sensor networks: architecture and routing’, EURASIP Journal on Wireless Communications and Networking, vol. 2011, p. 159, 2011.

N. Derbel, F. Derbel, and O. Kanoun, Systems, Automation and Control: 2017 vol. 5: Walter de Gruyter GmbH & Co KG, 2017.

H. F. Durrant-Whyte, Integration, coordination and control of multi-sensor robot systems vol. 36: Springer Science & Business Media, 2012.

A. Ghorbel, M. Jallouli, L. Amouri, and N. B. Amor, ‘A HW/SW Implementation on FPGA of Absolute Robot Localization Using Webcam Data’, Sensors, Circuits & Instrumentation Systems, vol. 2, p. 75, 2017.

J. Gubbi, R. Buyya, S. Marusic, and M. Palaniswami, ‘Internet of Things (IoT): A vision, architectural elements, and future directions’, Future generation computer systems, vol. 29, pp. 1645-1660, 2013.

O. Vermesan and J. Bacquet, Next generation Internet of Things: Distributed intelligence at the edge and human machine-to-machine cooperation: River Publishers, 2019.

A. Banafa, Secure and Smart Internet of Things (IoT): River Publishers, 2018.

O. Vermesan and J. Bacquet, Cognitive Hyperconnected Digital Transformation: Internet of Things Intelligence Evolution: River Publishers, 2017.

K. Sha, A. Striegel, and M. Song, Advances in Computer Communications and Networks: From Green, Mobile, Pervasive Networking to Big Data Computing: River Publishers, 2016.

R. Chimata, R. Singh, and B. Singh, Internet of Things in Automotive Industries and Road Safety: River Publishers, 2018

E. H. Putley, The Hall effect and semi-conductor physics, 1968.

R. S. Popovic, Hall effect devices: magnetic sensors and characterization of semiconductors: CRC Press, 2004.

E. Ramsden, Hall-effect sensors: theory and application: Elsevier, 2011.

M. Crescentini, M. Biondi, A. Romani, M. Tartagni, and E. Sangiorgi, ‘Optimum design rules for CMOS Hall sensors’, Sensors, vol. 17, p. 765, 2017.

Y. Chemthung, T. Phetchakul, and A. Poyai, ‘Effect of Horizontal Magnetic Field on Magnetoresistance’, 15th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON2018), pp. 209-212, 2018.

C. Reig, S. Cardoso, and S. C. Mukhopadhyay, ‘Giant magnetoresistance (GMR) sensors’, SSMI6, vol. 1, pp. 157-80, 2013.

L. Davies and M. Wells, ‘Magneto-transistor incorporated in a bipolar IC’, Proc. ICMCST, Sydney, Australia, pp. 34-35, 1970.

C. Riccobene, G. Wachutka, J. Burgler, and H. Baltes, ‘Operating principle of dual collector magnetotransistors studied by two-dimensional simulation’, IEEE Transactions on Electron Devices, vol. 41, pp. 1136-1148, 1994.

Lj. Ristic M. Doan and M. Paranjape, ‘3-D Magnetic Field Sensor Realized as Lateral Magnetotransistor in CMOS Technology’, Sensor and Actuators, Vols. A21-A23, pp. 770, 1990.

C. Leepattarapongpan, T. Phetchakul, N. Penpondee, P. Pengpad, E. Chaowicharat, C. Hruanun, A. Poyai, ‘Magnetotransistor based on the carrier recombination–deflection effect’, IEEE Sensor Journal 10(2), pp. 294-299, 2010

C. Leepattarapongpan et al., ‘A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination–deflection effect’, Microelectron Journal, vol. 45, pp. 565-573, 2014.

E. Yosry, W. Fikry, A. El-henawy, and M. Marzouk, ‘Compact model of dual-drain MAGFETs simulation’, Int. J. Electron. Commun. Comput. Eng, vol. 1, pp. 112-116, 2009.

R. Nakachai, A. Poyai, and T. Phetchakul, ‘Non-Split Drain MAGFET’, 5th International Conference on Engineering, Applied Sciences and Technology (ICEAST), pp. 1-4, 2019.

R. S. Popovic, H. P. Baltes, and F. Rudolf, ‘An integrated silicon magnetic field sensor using the Magnetodiode principle’, IEEE Transactions on Electron Devices, vol. 31, pp. 286-291, 1984.

A. Nathan, A. M. J. Huiser, and H. P. Baltes, ‘Two-dimensional numerical modeling of magnetic-field sensors in CMOS technology’, IEEE Transactions on Electron Devices, vol. 32, pp. 1212-1219, 1985.

Sentaurus Process User Guide, Mountain View, CA, USA: Synopsys Inc, 2016.

Sentaurus Structure Editor User Guide, Mountain View, CA, USA: Synopsys Inc, 2016.

Sentaurus Device User Guide, Mountain View, CA, USA: Synopsys Inc, 2016.

K. Hess, Advanced theory of semiconductor devices, 2000.

J.-P. Colinge and C. A. Colinge, Physics of semiconductor devices: Springer Science & Business Media, 2005.

D. A. Neamen, Semiconductor physics and devices: basic principles: New York, NY: McGraw-Hill, 2012.

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Published

2020-08-17

How to Cite

Sutthinet, C., Poyai, A., & Phetchakul, T. (2020). A Novel Dual Magnetodiode for Wireless Sensor Networks. Journal of Mobile Multimedia, 16(1-2), 23–44. https://doi.org/10.13052/jmm1550-4646.16122

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Section

Smart Innovative Technology for Future Industry and Multimedia Applications

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